Exploring Samsung’s Latest 12nm-Class DDR5 DRAM

Ideal for the Age of Artificial Intelligence, Samsung Electronics Has Introduced the Industry’s Highest-Capacity 12nm-Class 32Gb DDR5 DRAM

Offers twice the capacity of 16 GB modules while maintaining the same package size, making possible the manufacturing of 128 GB DRAM modules without the use of the TSV process and resulting in a 10% reduction in power consumption.

Additionally, the new product opens the path for DRAM modules with capacities of up to 1 terabyte

Samsung will continue its engagement with a wide variety of sectors and provide support for a wide range of applications by using its enlarged portfolio of 12nm-class DRAM.

Samsung Electronics, a global leader in advanced memory technology, made the announcement today that it has created the industry’s first and highest-capacity 32-gigabit (Gb) DDR5 DRAM1 utilising 12 nanometer (nm)-class process technology. This achievement was made possible by the company’s use of a 12 nanometer (nm)-class process technology.

This accomplishment was made possible by Samsung when the company started mass manufacturing of their 12nm-class 16Gb DDR5 DRAM in May of 2023. It reaffirms Samsung’s position as the industry leader in next-generation DRAM technology and heralds the beginning of the next chapter in the history of high-capacity memory.

“With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1 terabyte (TB),” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “This allows us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data,” Hwang added.

“We will continue to develop DRAM solutions through differentiated process and design technologies in an effort to break the boundaries of memory technology.”

Since 1983, there has been a 500,000-fold increase in the capacity of DRAM

After developing its initial dynamic random access memory (DRAM) with 64 kilobits (Kb) in 1983, Samsung has now achieved success in increasing its DRAM capacity by a factor of 500,000 over the course of the last 40 years.

The most recent memory product that Samsung has released claims the industry’s greatest capacity for a single DRAM chip and delivers twice the capacity of 16Gb DDR5 DRAM in the same package size. This memory product was produced by Samsung employing the most cutting-edge methods and technologies in order to boost integration density and design optimisation.

In the past, the Through Silicon Via (TSV) manufacturing technique was necessary for DDR5 128GB DRAM modules that were created utilising 16Gb DRAM. When compared to 128GB modules that include 16Gb DRAM, however, power consumption may be reduced by around 10% when utilising Samsung’s 32Gb DRAM in their production of the 128GB module.

This is possible since the TSV process is no longer necessary. Because of this technical advancement, the device is the best option for businesses that place a premium on power efficiency, such as data centres.

With its 12nm-class 32Gb DDR5 DRAM serving as a foundation, Samsung intends to continue growing its array of high-capacity DRAM in order to fulfil the needs of the computing and IT sector both now and in the future.

Data centres and clients that demand applications like artificial intelligence and next-generation computing will be supplied with the 12-nm-class 32Gb DRAM by Samsung, which will allow Samsung to reassert its leading position in the market for next-generation DRAM. Additionally, the device will play a significant part in Samsung’s ongoing efforts to collaborate with other prominent companies in the industry.

By the time this year comes to a close, it is anticipated that mass manufacturing of the brand-new 12nm-class 32Gb DDR5 DRAM will have begun.

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