SK Hynix, a leading semiconductor manufacturer, has announced the commencement of mass production for SK Hynix 238-layer 3D NAND memory devices. These chips offer high performance and capacity, making them suitable for the next generation of solid-state drives (SSDs). With a data transfer rate of 2400 MT/s, these chips can enable SSDs with sequential read/write speeds of 12 GB/s and higher, particularly when paired with PCIe 5.0 x4 interfaces.
For performance PC enthusiasts, the key advantage of SK Hynix’s 238-layer TLC NAND IC is its interface speed of 2400 MT/s, which represents a 50% increase compared to the previous generation. This higher speed is necessary to fully utilize a PCIe Gen5 x4 interface and achieve the desired transfer rates. In contrast, 3D NAND devices with a 1600 MT/s interface fall short in saturating the PCIe Gen5 x4 interface.
The first 238-layer 3D NAND device produced by SK Hynix is a 512Gb (64GB) 3D TLC device that offers a 34% increase in manufacturing efficiency compared to the company’s previous 176-layer 3D NAND node. This improved efficiency, coupled with potentially high yields, can significantly reduce bit costs, making the device more cost-competitive. Additionally, the new chips are smaller and consume 21% less power during reads, making them suitable for mobile PCs and smartphones.
SK Hynix utilizes a charge trap flash (CTF) design and its proprietary peripheral under cells (PUC) layout, which the company refers to as ‘4D’ NAND. This design allows for smaller memory devices, leading to further cost reductions in SK Hynix’s NAND products. Initially, the 238-layer memory will be used in smartphones, with plans to expand its usage across a broader portfolio of products.
The company expects its 238-layer NAND devices, along with the previous generation’s 176-layer NAND, to drive earnings improvement in the second half of the year, as they offer competitive pricing, performance, and quality.
These chips offer high performance and capacity, making them suitable for the next generation of solid-state drives (SSDs(NAND )). The first 238-layer 3D NAND device produced by SK Hynix is a 512Gb (64GB) 3D TLC device that offers a 34% increase in manufacturing efficiency compared to the company’s previous 176-layer 3D NAND node. Additionally, the new chips are smaller and consume 21% less power during reads, making them suitable for mobile PCs and smartphones. SK Hynix expects the 238-layer NAND devices, along with the previous generation’s 176-layer NAND, to drive earnings improvement in the second half of the year.
